型号:

FDB14N30TM

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET N-CH 300V 14A D2PAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
FDB14N30TM PDF
标准包装 800
系列 UniFET™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 300V
电流 - 连续漏极(Id) @ 25° C 14A
开态Rds(最大)@ Id, Vgs @ 25° C 290 毫欧 @ 7A,10V
Id 时的 Vgs(th)(最大) 5V @ 250µA
闸电荷(Qg) @ Vgs 25nC @ 10V
输入电容 (Ciss) @ Vds 1060pF @ 25V
功率 - 最大 140W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 D²PAK
包装 带卷 (TR)
产品目录页面 1606 (CN2011-ZH PDF)
其它名称 FDB14N30TMTR
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